InGaN-based solar cells for high-efficiency photovoltaics and wireless power transfer

PUBBLICAZIONI:

  1. M. Buffolo et al., "Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers," in IEEE Journal of Quantum Electronics, vol. 55, no. 3, pp. 1-7, June 2019, Art no. 2000607. doi: 10.1109/JQE.2019.2909963trhwrth
  2. M. Buffolo, F. Samparisi, C. De Santi, D. Jung, J. Norman, J. E. Bowers, R. W. Herrick, G. Meneghesso, E. Zanoni, M. Meneghini, "Degradation mechanisms of InAs quantum dot 1.3 um laser diodes epitaxially grown on silicon," Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390P (1 March 2019), https://doi.org/10.1117/12.2509277
  3. M. Buffolo, M. Pietrobon, C. De Santi, F. Samparisi, M.L. Davenport, J.E. Bowers, G. Meneghesso, E. Zanoni, M. Meneghini, Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits, Microelectronics Reliability, Volumes 88–90, 2018, Pages 855-858, ISSN 0026-2714, https://doi.org/10.1016/j.microrel.2018.06.058.
  4. M. Buffolo, M. Meneghini, C. De Santi, N. Trivellin, M. L. Davenport, J. E. Bowers, G. Meneghesso, Enrico Zanoni, "Defect-related degradation of III-V/Silicon 1.55 µm DBR laser diodes ," Proc. SPIE 10537, Silicon Photonics XIII, 105370X (22 February 2018), https://doi.org/10.1117/12.2288144
  5. C. De Santi, M. Meneghini, A. Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, E. Zanoni, G. Meneghesso, "Degradation processes and origin in InGaN-based high-power photodetectors," Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321J (23 February 2018), https://doi.org/10.1117/12.2289466
  6. D. Monti, M. Meneghini, C. De Santi, S. Da Ruos, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, "Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress ," Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 1055410 (15 February 2018), https://doi.org/10.1117/12.2292202
  7. C. De Santi et al 2018, Evidence of optically induced degradation in gallium nitride optoelectronic devices, Appl. Phys. Express 11 111002, https://doi.org/10.7567/APEX.11.111002
  8. C. De Santi, M. Meneghini, A. Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, B. Kalinic, T. Cesca, G. Meneghesso, and E. Zanoni, “GaN-Based Laser Wireless Power Transfer System,” Materials, vol. 11, no. 1, p. 153, Jan. 2018. https://doi.org/10.3390/ma11010153, invited paper
  9. C. De Santi, M. Meneghini, A. Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, E. Zanoni, G. Meneghesso, Degradation of InGaN-based MQW solar cells under 405nm laser excitation, Microelectronics Reliability, Volumes 76–77, 2017, Pages 575-578, ISSN 0026-2714, https://doi.org/10.1016/j.microrel.2017.06.072.
  10. D. Monti, M. Meneghini, C. De Santi, A. Bojarska, P. Perlin, G. Meneghesso, E. Zanoni, Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes, Microelectronics Reliability, Volumes 88–90, 2018, Pages 864-867, ISSN 0026-2714, https://doi.org/10.1016/j.microrel.2018.06.055.
  11. N. Trivellin, M. Buffolo, C. De Santi, D. Monti, M. Meneghini, G. Meneghesso, E. Zanoni, "Effects on chromatic properties of Solid State Light Reliability", 16th International Symposium on the Science and Technology of Lighting (LS-16), Sheffield, UK, 17-22 June 2018, invited presentation
  12. D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, A. Bojarska, P. Perlin, Long-term degradation of InGaN-based laser diodes: Role of defects, Microelectronics Reliability, Volumes 76–77, 2017, Pages 584-587, ISSN 0026-2714, https://doi.org/10.1016/j.microrel.2017.06.043.
  13. C. De Santi, M. Meneghini, A. Caria, N. Renso, E. Dogmus, M. Zegaoui, F. Medjdoub, E. Zanoni, G. Meneghesso, "Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices", Proceedings of the 2018 Compound Semiconductor Week (CSW 2018), Boston, MA, 29 May - 1 June 2018
  14. C. De Santi, M. Meneghini, A. Caria, N. Renso, E. Dogmus, M. Zegaoui, F. Medjdoub, E. Zanoni, G. Meneghesso, "Degradation of InGaN-based optoelectronic devices under electrical and optical stress", Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018), Napoli, Italy, 20-22 June 2018
  15. C. De Santi, A. Caria, M. Meneghini, G. Meneghesso, E. Zanoni, " Laser-based wireless power transfer ", Brains meet digital enterprises, Padova, 25 Ottobre 2018
  16. C. De Santi, M. Meneghini, A. Caria, N. Renso, E. Dogmus, M. Zegaoui, F. Medjdoub, E. Zanoni, G. Meneghesso, "Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors", GaN Marathon 2.0, Padova, Italy, 18-19 April 2018, invited presentation
  17. D. Monti, C. De Santi, S. Da Ruos, F. Piva, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni, M. Meneghini, "High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes," in IEEE Transactions on Electron Devices, vol. 66, no. 8, pp. 3387-3392, Aug. 2019. doi: 10.1109/TED.2019.2920521
  18. C. De Santi et al., “Photon-driven degradation processes in GaN-based optoelectronic devices”, proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 7-12 July 2019, Bellevue, Washington, USA
  19. Caria, C. De Santi, E. Dogmus, M. Zegaoui, F. Medjdoub, E. Zanoni, G. Meneghesso and M. Meneghini, “Understanding the spectral efficiency of InGaN-GaN Multiple Quantum Wells photodetectors”, submitted and under review in AIP Applied Physics Letters
  20. M. Meneghini et al., “Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processes”, accepted for presentation at SPIE Photonics West 2020, San Francisco, USA, 1-6 February 2020
  21. Caria et al., “Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition”, accepted for presentation at SPIE Photonics West 2020, San Francisco, USA, 1-6 February 2020
  22. Caria et al., “Dependence of degradation on InGaN quantum well position: a study based on color coded structures”, accepted for presentation at SPIE Photonics West 2020, San Francisco, USA, 1-6 February 2020
  23. F. Piva et al., “Degradation mechanisms of 1.6 W blue semiconductor lasers: effect on subthreshold optical power and power spectral density”, accepted for presentation at SPIE Photonics West 2020, San Francisco, USA, 1-6 February 2020
  24. F. Piva et al., “Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements”, accepted for presentation at SPIE Photonics West 2020, San Francisco, USA, 1-6 February 2020